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CJPF07N65 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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CJPF07N65
TO-220F Plastic-Encapsulate MOSFETS
CJPF07N65 N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
ï¬ High Current Rating
ï¬ Lower RDS(on)
ï¬ Lower Capacitance
ï¬ Lower Total Gate Charge
ï¬ Tighter VSD Specifications
ï¬ Avalanche Energy Specified
ï¬ Fast Switching Capability
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
Duration for 5 Seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
TO-220F
1. GATE
2. DRAIN
3. SOURCE
Value
650
±30
7.4
29.6
245
62.5
-55 ~+150
260
Unit
V
V
A
A
mJ
â/W
â
â
sales@zpsemi.com
www.zpsemi.com
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