CJPF05N60 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJPF05N60
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFET
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
such as power suplies, converters, power motor controls and bridge
circuits.
FEATURES
z Low R_DS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter V_SD Specifications
z Avalanche Energy Specified
2.Drain
TO-220F
1. GATE
2. DRAIN
3. SOURCE
123
1.Gate
3.Source
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Single Pulsed Avalanche Energy (note1)
E_AS
Power Dissipation (note2,T_a=25℃)
P_D
Maximum Power Dissipation (note3,T_c=25℃)
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_J
Storage Temperature
T_stg
Value
600
±30
4.5
250
2
120
62.5
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
[e-mail]
www.zpsemi.com
1 of 3