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| CJP75N80-TO220-3L Datasheet, PDF (1/2 Pages) ZP Semiconductor – N-Channel Power MOSFET | |||
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CJP75N80
TO-220-3L Plastic-Encapsulate MOSFETS
CJP75N80 N-Channel Power MOSFET
TO-220-3L
DESCRIPTION
The CJP75N80 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
FEATURE
ï¬ Advanced trench process technology
ï¬ Special designed for convertors and power controls
ï¬ High density cell design for ultra low RDS(on)
ï¬ Fully characterized avalanche voltage and current
ï¬ Fast switching
ï¬ Good stability and uniformity with high EAS
ï¬ Excellent package for good heat dissipation
ï¬ Special process technology for high ESD capability
1. GATE
2. DRAIN
3. SOURCE
APPLICATION
ï¬ Power switching application
ï¬ Hard switched and high frequency circuits
ï¬ Uninterruptible power supply
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Symbol
Drain-Source voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (note1)
IDM
Power Dissipation
Maximum Power Dissipation
(note 2 , Ta=25â)
(note 3 , Tc=25â)
PD
Single Pulsed Avalanche Energy(note4)
EAS
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. This test is performed with no heat sink at Ta=25â
3. This test is performed with infinite heat sink at Tc=25â
4. EAS condition: Tj=25â,VDD=37.5V,VGS=10V,L=0.5mH,Rg=25â¦.
Value
75
±20
80
320
2
170
580
62.5
150
-55 ~+150
Unit
V
A
W
W
mJ
â/W
â
sales@zpsemi.com
www.zpsemi.com
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