CJP71N90-TO220H-3L Datasheet, PDF (1/2 Pages) ZP Semiconductor – N-Channel MOSFET

CJP71N90
T0-220H-3L Plastic-Encapsulate MOSFETS
CJP71N90 N-Channel MOSFET
TO-220H-3L
DESCRIPTION
The CJP71N90 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge .This device is suitable for use
in a wide variety of applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z Lead free product is acquired
z Special process technology for high ESD capability
z High density cell design for ultra low R_DS(on)
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
APPLICATION
z Power switching application
z Hard switching and high frequency circuits
z Uninterruptible power supply
Maximum ratings (T_a=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Thermal Resistance from Junction to Ambient (note 2)
Single Pulsed Avalanche Energy (note5)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
R_θJA
E_AS
T_J
T_STG
Value
71
±20
90
320
62.5
580
150
-55~+150
Unit
V
V
A
A
℃/W
mJ
℃
℃
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