CJP12N65 Datasheet, PDF (1/3 Pages) ZP Semiconductor – N -Channel Power MOSFET

CJP12N65
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N65 N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower R_DS(on)
z Low Reverse Transfer Capacitance
z Fast Switching Capability
z Tighter V_SD Specifications
z Avalanche Energy Specified
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Single Pulsed Avalanche Energy (note2)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GSS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
TO-220-3L
1. GATE
2. DRAIN
3. SOURCE
Value
650
±30
12
48
540
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
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