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CJND2007 Datasheet, PDF (1/2 Pages) ZP Semiconductor – D ual N-Channel MOSFET | |||
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CJND2007
DFNWB5Ã2-6L-A Plastic-Encapsulate MOSFETS
CJND2007 Dual N-Channel MOSFET
DFNWB5Ã2-6L-A
DESCRIPTION
The CJND2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient(note1)
Thermal Resistance from Junction to Ambient(note2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8ââ from case for 10 s)
*Repetitive ratingï¼Pluse width limited by junction temperature.
Noteï¼1.When mounted on a minimum pad.
2.When mounted on 1 in2 of 2oz copper board.
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
7
30
175
70
150
-55~+150
260
Unit
V
V
A
A
â/W
â/W
â
â
â
sales@zpsemi.com
www.zpsemi.com
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