CJMPD08 Datasheet, PDF (1/3 Pages) ZP Semiconductor – P-Channel Power MOSFET

CJMPD08
DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS
CJMPD08 P-Channel Power MOSFET
General Description
The CJMPD08 uses advanced trench technology and design to
Provide excellent R_DS(on) with low gate charge. This device is suitable for use
in DC-DC conversion applications.
DFNWB2*2-6L-A
FEATURE
z Low Profile for Easy Fit in Thin Environments
z Bidirectional Current Folw with Common Source Configuration
APPLICATIONS
z Optimized for Battery and Load Management Applications in Portable Equipment
z Li-Ion Battery Charging and Protection Circuits
z High Power Management in Portable , Battery Powered Products
z High Side Load Switch
MARKING:
front
Tape Drawing (Unit : mm)
back
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(Note1a)
Power Dissipation (Note1a)
Power Dissipation (Note1b)
Thermal Resistance from Junction to Ambient (Note1a)
Symbol
V_DS
V_GS
I_D
P_D
P_D
R_θJA
Value
-20
±8
-3.6
1.4
0.7
86
[e-mail]
www.zpsemi.com
Unit
V
A
W
W
℃/W
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