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| CJL6601 Datasheet, PDF (1/2 Pages) ZP Semiconductor – P-channel and N-channel Complementary MOSFETS | |||
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CJL6601
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6601 P-channel and N-channel Complementary MOSFETS
GENERAL DESCRIPTION
The CJL6601 uses advanced trench technology to provide excellent RDS(on)
and low gate charge. The complementary MOSFETS form a high-speed
power inverter and suitable for a multitude of applications.
SOT-23-6L
Maximum Ratings (TA=25â unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
N-channel
VDS
30
P-channel
-30
V
Gate-Source Voltage
VGS
±12
±12
V
Continuous Drain Current(1)
ID
3.4
-2.3
A
Pulsed Drain Current (2)
IDM
30
-30
A
Power Dissipation
PD
0.35
0.35
W
Thermal Resistance from Junction to Ambient(1)
RθJA
357
357
â/W
Junction Temperature
TJ
150
150
â
Storage Temperature
Tstg
-55~+150
-55~+150
â
1.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on
tâ¤10s thermal rasistance rating.
2. Repetitive rating,pulse with limited by junction temperature.
sales@zpsemi.com
www.zpsemi.com
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