CJL3443 Datasheet, PDF (1/3 Pages) ZP Semiconductor – P - Channel 20-V(D-S) MOSFET

CJL3443
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3443 P-Channel 20-V(D-S) MOSFET
FEATURE
z Fast Switching Speed
z Low Gate Charge
z High Performance Trench Technology for extremely Low R_DS(on)
SOT-23-6L
1. GATE
2. DRAIN
3. SOURCE
Description
This P-Channel MOSFET is produced using advanced PowerTrench
process that has been especially tailored to minimize on-state resistance
and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation
In a very small footprint for applications where the larger packages are impractical.
D
D
G
1
6
2
5
3
4
MARKING:
R43
D
D
S
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_j
T_stg
Value
-20
±8
-4
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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