CJL3415 Datasheet, PDF (1/2 Pages) ZP Semiconductor – P-Channel MOSFET

CJ/3415
SOT-23-L Plastic-Encapsulate MOSFETS
CJ/3415 P-Channel MOSFET
FEATURE
Excellent R_DS(ON), low gate charge,low gate voltage
High power and current handing capability
APPLICATION
Load switch and in PWM applicatopns
MARKING: R15
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t≤10s)
Pulsed Drain Current (note1)
Maximum Power Dissipation (t≤10s)
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
SOT-23-/
ValueUnit
-20
V
±8
-4.0
A
-30
0.35
357
150
-55 ~+150
A
W
 ℃/W
℃
℃
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