CJK3407 Datasheet, PDF (1/2 Pages) ZP Semiconductor – P-Channel Enhancement Mode Field Effect Transistor

CJK3407
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The CJK3407 uses advanced trench technology to provide excellent
R_DS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING: R7
SOT-23-3L
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
-30
±20
-4.1
-20
300
417
150
-55~ +150
Units
V
V
A
A
mW
℃/W
℃
℃
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