CJHD4P02F Datasheet, PDF (1/2 Pages) ZP Semiconductor – P-channel MOSFET and Schottky Barrier Diode

CJHD4P02F
DFNWB3×2-08L-B Power Management MOSFETS-Schottky
CJHD4P02F P-channel MOSFET and Schottky Barrier Diode
FEATURES
• Featuring a MOSFET and Schottky Diode
• Independent Pinout to Each Device to Ease Circuit Design
• Ultra Low V_F Schottky
Applications
• Li−Ion Battery Charging
• High Side DC−DC Conversion Circuits
• High Side Drive for Small Brushless DC Motors
• Power Management in Portable, Battery Powered Products
Marking
pin connections:
DFNWB3×2-08L-B
MOSFET MAXIMUM RATINGS (T_a=25°C unless otherwise noted)
Symbol
Parameter
Value
V_DSS
Drain-Source voltage
-20
V_GS
Gate-Source Voltage
±12
I_D
Continuous Drain Current
-2.1
I_DM
Drain Current-Pulsed
-7
P_D
Power Dissipation
1.1
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55-150
R_θJA
Thermal Resistance, Junction-to-Ambient
110
Units
V
V
A
A
W
℃
℃
℃ /W
SCHOTTKY DIODE MAXIMUM RATINGS7D °CXQOHVVRWKHUZLVHQRWHG
Symbol
Parameter
Limits Unit
V_RRM Peak repetitive reverse voltage
20
V
V_R DC Blocking voltage
20
V
I_F
Average rectified forward current
2.2
A
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