CJHD3101F Datasheet, PDF (1/2 Pages) ZP Semiconductor – P-channel MOSFET and Schottky Barrier Diode

CJHD3101F
DFNWB3×2-08L-B Power Management MOSFETS-Schottky
CJHD3101F P-channel MOSFET and Schottky Barrier Diode
FEATURES
z Both a MOSFET Chip and a Schottky Diode Ship in an Package.
z Leadless Package Provides Great Thermal Characteristics
z Independent Pinout to Each Device to Ease Circuit Design
z Trench P−Channel for Low On Resistance
z Ultra Low VF Schottky
z Pb−Free Package are Available
APPLICATIONS
z Li−Ion Battery Charging
z High Side DC−DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
MARKING
DFNWB3×2-08L-B
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol Parameter
Value
Units
VDSS
Drain-Source voltage
-20
V
VGS
Gate-Source Voltage
±8
V
ID
Continuous Drain Current
-3.2
A
IDM
Drain Current-Pulsed
-13
A
PD
Power Dissipation
1.1
W
TJ
Tstg
RθJA
Junction Temperature
Storage Temperature
Thermal Resistance from Junction to Ambient
150
-55-150
110
℃
℃
℃ /W
SCHOTTKY DIODE MAXIMUM RATINGS(Ta= 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM Peak repetitive reverse voltage
20
V
VR DC Blocking voltage
IF
Average rectified forward current
20
V
2.2
A
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