CJD4435 Datasheet, PDF (1/2 Pages) ZP Semiconductor – P-Channel 30-V(D-S) MOSFET

CJD4435
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4435 P-Channel 30-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
z Load Switch
z Battery Switch
TO-251-3L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Power Dissipation
Maximum Power Dissipation
(note 1, T_a=25℃)
P_D
(note 2, T_c=25℃)
Thermal Resistance from Junction to Ambient (t≤10S)
R_θJA
Operating Junction Temperature
T_J
Storage Temperature
T_stg
.
Value
-30
±20
-9.1
1
15
125
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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