CJD04N60B Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJD04N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B 600V N-Channel Power MOSFET
General Description
This advanced high voltage MOSFET is designed to wighstand high
energy in the avalanche mode and switch efficiently.This new high energy
device also offers a drain-to-source diode wigh fast recovery time.Desighed
for high voltage,high speed switching applications such as power
supplies,converters,power motor controls and bridge circuits.
TO-251S
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower R_ds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter V_SD Specifications
z Avalanche Energy Specified
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperure for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
600
±30
4.0
16
260
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
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