CJD04N60A Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJD04N60A
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60A N-Channel Power MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower R_DS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter V_SD Specifications
z Avalanche Energy Specified
TO-251S
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperure for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J, T_STG
T_L
Value
600
±30
4.0
16
260
100
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
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