CJD02N60-TO251-3L Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description
The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition , this advanced
MOSFET is designed to withstand high energy in avalanche and
commutation modes . The new energy efficient design also offers a
drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power suppliers,
converters and PWM motor controls , these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional and safety margin
against unexpected voltage transients.
TO-251-3L
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z I_DSS and V_DS(on) Specified at Elevated Temperature
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
I_D
2
Pulsed Drain Current
I_DM
8
Single Pulsed Avalanche Energy*
E_AS
128
Power Dissipation
P_D
1.25
Thermal Resistance from Junction to Ambient
R_θJA
100
Junction Temperature
T_J
150
Storage Temperature
T_stg
-50 ~+150
*E_AS condition: T_j=25℃,V_DD=50V,L=64mH,I_AS=2A,R_G=25Ω, Starting T_J = 25°C
Unit
V
A
mJ
W
℃/W
℃
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