CJD01N80 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJD01N80
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N80 N-Channel Power MOSFET
GENERAL DESCRIPTION
The CJD01N80 is an N-channel mode power MOSFET using
advanced technology to provide costomers with planar stripe. This
technology specializes in allowing a minimum on-state resistance and
superior switching performance. It also can withstand high energy pulse
in the avalanche and commutation mode. The CJD01N80 is universally
applied in high efficiency switch mode power supply.
FEATURE
z Excellent package for good heat dissipation
z High switching speed
z 100% avalanche tested
APPLICATION
z Power switching application
z DC/DC converters
TO-251-3L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
800
±30
1
4
90
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
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