CJD01N60 Datasheet, PDF (1/3 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJD01N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N60 N-Channel Power MOSFET
General Description
TO-251-3L
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed 1. GATE
to withstand high energy in avalanche and commutation modes . The
2. DRAIN
new energy efficient design also offers a drain-to-source diode with a
3. SOURCE
1
fast recovery time. Designed for high voltage, high speed switching
123
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z I_DSS and V_DS(on) Specified at Elevated Temperature
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Single Pulse Avalanche Energy (note 1)
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
E_AS
I_D
P_D
R_θJA
T_J
T_STG
Value
600
±20
20
1
1
125
150
-50 ~+150
Unit
V
mJ
A
W
℃/W
℃
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