CJA03N10 Datasheet, PDF (1/2 Pages) ZP Semiconductor – SOT-89-3L Plastic-Encapsulate MOSFETS

CJA03N10
SOT-89-3L Plastic-Encapsulate MOSFETS
CJA03N10 N-Channel MOSFET
DESCRIPTION
The CJA03N10 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge .This device is suitable for use
in a wide variety of applications.
FEATURES
z Lead free product is acquired
z Special process technology for high ESD capability
z High density cell design for ultra low R_DS(on)
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
APPLICATION
z Power switching application
z Hard switching and high frequency circuits
z Uninterruptible power supply
SOT-89-3L
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
100
±20
3
20
0.5
250
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
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