CJ8820 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

CJ8820
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION
The CJ8820 use advanced trench technology to provide excellent
R_DS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-source voltage
V_DS
Gate-source voltage
V_GS
Continuous drain current (t ≤10s)
I_D
Pulsed drain current *
I_DM
Power dissipation
P_D
Thermal resistance from junction to ambient
R_θJA
Junction temperature
T_J
Storage temperature
T_stg
* Repetitive rating : Pulse width limited by junction temperature.
Value
20
±12
7
25
0.3
417
150
-55~ 150
Units
V
V
A
A
W
℃/W
℃
℃
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