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| CJ7252KDW Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS | |||
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CJ7252KDW
SOT-363 Plastic-Encapsulate MOSFETS
CJ7252KDW N Channel + P Channel Power MOSFET
DESCRIPTION
This N Channel + P Channel MOSFET has been designed using
advanced power trench process to optimize the RDS(ON).
FEATURE
z High-Side Switching
z Low Threshold
z Fast Switching Speed
z Including a 2N7002K and a CJ502K MOSFET (independently) in a
package
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
MARKING: 75
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
N-Channel MOSFET
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current -Continuous
IDM
Drain Current - Pulsed(Note1)
P- Channel MOSFET
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current -Continuous
IDM
Drain Current â Pulsed (Note1)
Power Dissipation, Temperature and Thermal Resistance
PD
Power Dissipation
Value
60
±20
0.34
1.36
-50
±20
-0.18
-0.7
0.15
SOT-363
Unit
V
V
A
A
V
V
A
A
W
sales@zpsemi.com
www.zpsemi.com
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