CJ5853DDC Datasheet, PDF (1/4 Pages) ZP Semiconductor – MISWB3×2-8L Power Management MOSFETs-Schottky

CJ5853DDC
MISWB3×2-8L Power Management MOSFETs-Schottky
CJ5853DDC P-channel MOSFET and Schottky Barrier Diode
FEATURES
z Independent Pinout to Each Device to Ease Circuit Design
z Ultra low V_F
z Including a CJ2301 MOSFET and a MBR0520 Schottky
(independently) in a package
APPLICATIONS
z Li-lon Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable，Battery Powered Products
MARKING:
MISWB3×2-8L
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current
I_DM*
Pulse Drain Current
Schottky Barrier Diode
V_RRM
V_R
I_O
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
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Value
-20
±8
-2.7
-10
20
20
1
1.1
114
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
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