CJ3415 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

CJ3415
SOT-23 Plastic-Encapsulate MOSFETS
CJ3415 P-Channel 20-V(D-S) MOSFET
FEATURE
Excellent R_DS(ON), low gate charge,low gate voltages
APPLICATIONS
Load switch and in PWM applicatopns
MARKING: R15
D
G
S
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t≤10s)
Maximum Power Dissipation (t≤10s)
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_STG
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Value
-20
±8
-4.0
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
℃
[e-mail]
www.zpsemi.com
1 of 3