CJ3400 Datasheet, PDF (1/5 Pages) ZP Semiconductor – N-Channel Enhancement Mode MOSFET

CJ3400
Feature
 30V/5.8A, R^DS(ON) = 35mΩ(MAX) @V^GS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.5V.
RDS(ON) =55mΩ(MAX) @VGS = 2.5V.
 Super High dense cell design for extremely low R^{DS(ON) .}
 Reliable and Rugged.
 SC-59 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET
SC-59
Applications
● Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃ Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
TA=25℃ Unless Otherwise noted
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
Symbol
BVDSS
Test Conditions
VGS=0V, ID=250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
IGSSF
IGSSR
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
On Characteristics
Gate Threshold Voltage
Static Drain-source
On-Resistance
VGS(th)
RDS(ON)
VGS= VDS, ID=250µA
VGS =10V, ID =5.8A
VGS =4.5V, ID =5A
VGS =2.5V, ID =4A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=1.25A
Limit
30
±12
5.8
Units
V
V
A
Min Typ. Max Units
30
-
-
V
-
-
1
μA
-
-
100
nA
-
-
-100
nA
0.6
-
1.5
V
-
30
35
mΩ
-
33
40
mΩ
-
45
55
mΩ
1.2
V
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