CJ2310 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

CJ2310
SOT-23 Plastic-Encapsulate MOSFETS
CJ2310 N-Channel MOSFET
DESCRIPTION
The CJ2310 uses advanced trench technology to provide excellent
R_DS(ON) , low gate charge and operation with gate voltage as low as 2.5V.
This device is suitable for use as a battery protection or in other switching
application.
FEATURES
 High power and current handing capability
 Lead free product is acquired
 Surface mount package
APPLICATION
 Battery Switch
 DC/DC Converter
MARKING: S10
Maximum ratings (T_a=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
60
±20
3
10
0.35
357
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
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