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| BSS84 Datasheet, PDF (1/5 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor | |||
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BSS84
P-Channel Enhancement Mode MOSFET
Feature
-50V/-0.13A, RDS(ON) =10Ω(MAX) @VGS = -5V, Ids=-0.1A
Super High dense cell design for extremely low RDS(ON)
Reliable and Rugged
SOT-23 for Surface Mount Package
SOT-23
Applications
â Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25â Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
Parameter
Symbol
TA=25â Unless Otherwise noted
Test Conditions
Off Characteristics
Drain to Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
Zero-Gate Voltage Drain Current
IDSS
VDS=-50V, VGS=0V
Gate Body Leakage Current, Forward
IGSSF
VGS=20V, VDS=0V
Gate Body Leakage Current, Reverse
IGSSR
VGS=-20V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=-1mA
Static Drain-sourceOn-Resistance
RDS(ON)
VGS =-5V, ID =-0.1A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=-0.13A
Limit
-50
±20
-0.13
Units
V
V
A
Min Typ. Max Units
-50
-
-
V
-
-
-15
µA
-
-
100
nA
-
-
-100
nA
-0.8
-
-2.5
V
-
5
10
Ω
-2.5
V
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