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BSS308PE Datasheet, PDF (1/3 Pages) Infineon Technologies AG – OptiMOS™ P3 Small-Signal-Transistor
BSS308PE
OptiMOS™ P3 Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
V GS=-10 V
V GS=-4.5 V
­30 V
80 mΩ
130
-2.0 A
PG-SOT-23
3
1
2
Type
Package Tape and Reel Information
BSS308PE PG-SOT23 H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Marking
YFs
Avalanche energy, single pulse
E AS
I D=-2 A, R GS=25 Ω
Reverse diode dv /dt
Gate source voltage
Power dissipation1)
Operating and storage temperature
ESD Class
dv /dt
I D=-2 A,
V DS=-16V,
di /dt =-200A/µs,
T j,max=150 °C
V GS
P tot
T A=25 °C
T j, T stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Lead Free
Yes
Packing
Non dry
Value
Unit
-2.0
A
-1.6
-8.0
-10.7
mJ
6
kV/µs
±20
V
0.5
W
-55 ... 150
°C
2 (2kV to 4kV)
260 °C
°C
55/150/56
°C
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