AP2302AGN Datasheet, PDF (1/6 Pages) ZP Semiconductor – N-Channel Enhancement Mode MOSFET

AP2302AGN
Feature
 16V/3.6A, R^DS(ON) = 100mΩ(MAX) @V^GS = 4.5V.
RDS(ON) = 140mΩ(MAX) @VGS = 2.5V.
 Super High dense cell design for extremely low R^{DS(ON) .}
 Reliable and Rugged.
 SOT-23 for Surface Mount Package.
N-Channel Enhancement Mode MOSFET
SOT-23
Applications
● Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
TA=25℃Unless Otherwise noted
Parameter
Symbol
Test Conditions
Off Characteristics
Drain to Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=12V, VGS=0V
Gate Body Leakage Current, Forward
IGSSF
VGS=8V, VDS=0V
Gate Body Leakage Current, Reverse
IGSSR
VGS=-8V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=250µA
Static Drain-source
RDS(ON)
VGS =4.5V, ID =3.6A
On-Resistance
VGS =2.5V, ID =3.1A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.94A
Limit
16
±8
3.6
Units
V
V
A
Min Typ. Max Units
16
-
-
V
-
-
1
μA
-
-
100
nA
-
-
-100
nA
0.4
-
1.3
V
-
70
100
mΩ
-
75
140
mΩ
1.2
V
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