AP2301AGN Datasheet, PDF (1/6 Pages) ZP Semiconductor – P-Channel Enhancement Mode MOSFET

AP2301AGN
Feature
 -20V/-3A, R^DS(ON) = 120mΩ(MAX) @V^GS = -4.5V.
RDS(ON) = 150mΩ(MAX) @VGS = -2.5V.
 Super High dense cell design for extremely low R^DS(ON)
 Reliable and Rugged
 SOT-23 for Surface Mount Package
P-Channel Enhancement Mode MOSFET
SOT-23
Applications
● Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
TA=25℃Unless Otherwise noted
Symbol
Test Conditions
BVDSS
VGS=0V, ID=-250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
IGSSF
IGSSR
VGS=10V, VDS=0V
VGS=-10V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=-250µA
Static Drain-source
On-Resistance
RDS(ON)
VGS =-4.5V, ID =-3.0A
VGS =-2.5V, ID =-2.0A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=-1.25A
Limit
-20
±10
-3
Units
V
V
A
Min
-20
-
-
-
Typ.
-
-
-
-
Max
-
-1
100
-100
Units
V
μA
nA
nA
-0.4
-
-1.0
V
-
--
120
mΩ
-
--
150
mΩ
-1.2
V
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