2N7002 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002
N-Channel Enhancement Mode MOSFET
Feature
l 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5A
RDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A
l Super High dense cell design for extremely low RDS(ON) .
l Reliable and Rugged.
l SOT-23 for Surface Mount Package.
SOT-23
Applications
● Power Management in Desktop Computer or DC/DC Converters .
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃ Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
TA=25℃ Unless Otherwise noted
Parameter
Symbol
Test Conditions
Off Characteristics
Drain to Source Breakdown Voltage
BVDSS
VGS=0V, ID=10μA
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
Gate Body Leakage Current, Forward
IGSSF
VGS=20V, VDS=0V
Gate Body Leakage Current, Reverse
IGSSR
VGS=-20V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=250µA
Static Drain-source
On-Resistance
RDS(ON)
VGS =10V, ID =0.5A
VGS =4.5V, ID =0.2A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.2A
Limit
60
±20
0.5
Units
V
V
A
Min Typ. Max Units
60
-
-
V
-
-
1
μA
-
-
100
nA
-
-
-100
nA
1
-
2.5
V
-
4500
7500
mΩ
-
5250
7500
mΩ
2.5
V
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