MMBT3904 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN switching transistor

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ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS⁽³⁾
Symbol
Min.
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=50 mAdc, VCE=1.0 Vdc )
( IC=100 mAdc, VCE=1.0 Vdc )
40
HFE
70
100
60
30
Collector-Emitter Saturation Voltage⁽³⁾
( IC=10 mAdc, IB=1.0 mAdc )
( IC=50 mAdc, IB=5.0 mAdc )
VCE(sat)
-
-
Base-Emitter Saturation Voltage⁽³⁾
( IC=10 mAdc, IB=1.0 mAdc )
( IC=50 mAdc, IB=5.0 mAdc )
VBE(sat)
0.65
-
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC=10 mAdc, VCE=20 Vdc, f=100 MHZ )
Output Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
fT
300
Cobo
-
Input Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
Noise Figure
( VCE=5.0 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ )
Cibo
-
hie
1.0
hre
0.5
hfe
100
hoe
1.0
NF
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
( VCC=3.0 Vdc, VBE=-0.5 Vdc,
IC=10 mAdc, IB1=1.0 mAdc )
Storage Time
Fall Time
( VCC=3.0 Vdc,
IC=10 mAdc, IB1=IB2=1.0 mAdc )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
REV. : 0
td
-
tr
-
ts
-
tf
-
Max.
Unit
-
-
-
300
-
-
0.2
Vdc
0.3
0.85
Vdc
0.95
-
MHZ
4.0
pF
8.0
pF
10
k ohms
8.0
X 10^-4
400
-
40
u mhos
5.0
dB
35
nS
35
200
nS
50
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