MMBTA43 Datasheet, PDF (1/3 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
MMBTA43
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
COLLECTOR
3
BASE
1
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
200
200
6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
DEVICE MARKING
MMBTA43=M1E
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage⁽³⁾
( IC= 1.0mAdc, IB=0 )
V(BR)CEO
200
Collector-Base Breakdowe Voltage
( IC= 100uAdc, IE=0 )
V(BR)CBO
200
Emitter - Base Breakdowe Voltage
( IE= 100 uAdc, IC=0 )
V(BR)EBO
6.0
Collector Cutoff Current
( VCE= 160 Vdc, IE = 0 )
ICBO
-
Emitter Cutoff Curretn
( VEB= 4.0 Vdc, IC=0 )
IEBO
-
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Max.
Unit
-
Vdc
-
Vdc
-
Vdc
0.1
uAdc
0.1
uAdc
REV. : 0
Zowie Technology Corporation