MMBT5550 Datasheet, PDF (1/4 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
3
MMBT5550
1
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
DEVICE MARKING
MMBT5550=M1F
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage⁽³⁾
( IC=1.0mAdc, IB=0 )
V(BR)CEO
Collector-Base Breakdowe Voltage
( IC=100 uAdc, IE=0 )
Emitter-Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
Base Cutoff Current
( VCE=100 Vdc, IE=0 )
( VCE=100 Vdc, IE=0, TA = 100^oC )
Collector Cutoff Current
( VEB=4.0 Vdc, IC=0 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width = 300 uS, Duty Cycle = 2.0%.
REV. : 0
V(BR)CBO
V(BR)EBO
ICBO
IEBO
COLLECTOR
3
BASE
1
2
EMITTER
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
Min.
Max.
Unit
140
-
Vdc
160
-
Vdc
6.0
-
Vdc
-
100
nAdc
-
100
uAdc
-
50
nAdc
Zowie Technology Corporation