MMBT5401GH Datasheet, PDF (1/4 Pages) Zowie Technology Corporation – High Voltage Transistor

Zowie Technology Corporation
High Voltage Transistor
Lead free product
Halogen-free type
FEATURE
ƽ We declare that the material of product _{compliance with RoHS requirements.}
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T _A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
V _CEO
V _CBO
V _EBO
I_C
Value
– 150
– 160
– 5.0
– 500
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
P_D
Max
225
Unit
mW
R _θJA
P_D
1.8
mW/°C
556
°C/W
300
mW
R _θJA
T _J , T_stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
MMBT5401GH
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = –1.0 mAdc, I _B = 0)
Collector–Base Breakdown Voltage
(I _C = –100 µAdc, I _E = 0)
Emitter-BAse Breakdown Voltage
(I _E= –10µAdc,I _C=0)
Collector Cutoff Current
(V _CB = –120 Vdc, I_E= 0)
V _(BR)CEO
V _(BR)CBO
V_(BR)EBO
I _CES
(V _CB = –120 Vdc, I_E= 0, T _A=100 °C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
– 150
– 160
-5.0
—
—
Max
Unit
Vdc
—
Vdc
—
Vdc
—
– 50
nAdc
– 50 µAdc
REV. 0
Zowie Technology Corporation