MMBT5401 Datasheet, PDF (1/4 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Zowie Technology Corporation
High Voltage Transistor
PNP Silicon
3
MMBT5401
1
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
DEVICE MARKING
MMBT5401=2L
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC = 1.0mAdc, IB = 0 )
V(BR)CEO
COLLECTOR
3
BASE
1
2
EMITTER
Value
-150
-160
-5.0
-500
Unit
Vdc
Vdc
Vdc
mAdc
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
Min.
Max.
Unit
-150
-
Vdc
Collector-Base Breakdowe Voltage
( IC = -100 uAdc, IE = 0 )
V(BR)CBO
-160
-
Vdc
Emitter-Base Breakdowe Voltage
( IE = -10 uAdc, IC = 0 )
Collector Cutoff Current
( VCE= -120 Vdc, IE = 0 )
( VCE= -120 Vdc, IE = 0, TA = 100 ^oC )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
V(BR)EBO
-5.0
ICES
-
-
-
Vdc
-50
nAdc
-50
uAdc
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