MMBT2907AGH Datasheet, PDF (1/3 Pages) Zowie Technology Corporation – General Purpose Transistor PNP Silicon

Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
Halogen-free type
Lead free product
MMBT2907AGH
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
COLLECTOR
3
BASE
1
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage⁽³⁾
( IC= -1.0mAdc, IB=0 )
V(BR)CEO
Collector-Base Breakdowe Voltage
( IC= -10uAdc, IE=0 )
V(BR)CBO
Emitter - Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
V(BR)EBO
Collector Cutoff Current
( VCE= -30 Vdc, VBE (off)= -0.5 Vdc )
ICEX
Collector Cutoff Current
( VCB= -50 Vdc, IE=0 )
( VCB= -50 Vdc, IE=0, TA=125^oC )
ICBO
Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc )
IB
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
REV. 0
Min.
-60
-60
-5.0
-
-
-
-
Max.
Unit
-
Vdc
-
Vdc
-
Vdc
-50
nAdc
-0.010
-10
-50
uAdc
nAdc
Zowie Technology Corporation