MMBD6100 Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – MONOLITHIC DUAL SWITCHING DIODE

Zowie Technology Corporation
Monolithic Dual Switching Diode
3
MMBD6100
1
2
SOT-23
MAXIMUM RATINGS
Rating
Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM( surge )
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
CATHODE
3
Value
70
200
500
Max.
225
1.8
556
300
2.4
417
-55 to +150
DEVICE MARKING
MMBD6100=5BM
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( IBR=100uAdc )
V(BR)
70
Forward Voltage
( IF=1.0 mAdc )
( IF=100 mAdc )
VF
550
850
ANODE
1
2
ANODE
Unit
Vdc
mAdc
mAdc
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
Max.
-
700
1100
Unit
Vdc
mVdc
Reverse Voltage Leakage Current (VR=50 Vdc )
Diode Capacitance
( VR=0, f=1.0MHZ )
Reverse Recovery Time
( IF=IR=10 mAdc, IR(REC)=1.0mAdc )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
IR
-
-
0.1
uAdc
CJ
-
2.5
pF
trr
-
4.0
nS
Zowie Technology Corporation