BC848A Datasheet, PDF (1/4 Pages) Zowie Technology Corporation – GENERAL PURPOSE TRANSISTOR NPN SILICON

Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC848A,B,C
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
COLLECTOR
3
BASE
1
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
30
30
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
DEVICE MARKING
BC848A=1J; BC848B=1K; BC848C=1L
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=10mA )
V(BR)CEO
30
-
-
Vdc
Collector-Emitter Breakdowe Voltage
( IC=10 uA, VEB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uA )
Emitter-Base Breakdowe Voltage
( IE=1.0 uA )
Collector Cutoff Current
( VCB=30 V )
( VCB=30 V, TA = 150^oC )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V(BR)CES
30
-
V(BR)CBO
30
-
V(BR)EBO
5.0
-
-
Vdc
-
Vdc
-
Vdc
ICBO
-
-
-
15
nAdc
-
5.0
uAdc
REV. : 0
Zowie Technology Corporation