BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

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Dual Series Switching Diode
BAV99
3
1
2
SOT-23
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectifierd Forward Current⁽¹⁾
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Curretn
t=1.0 uS
t=1.0 mS
t=1.0 S
Symbol
VR
IF
IFM( surge )
VRRM
IF( AV )
IFRM
IFSM
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
Vdc
mAdc
mAdc
A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-65 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
DEVICE MARKING
BAV99=A7
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (Continued) (EACH DIODE)
Characteristic
Symbol
Min.
Max.
OFF CHARACTERISTICS
Reverse Breakdown Voltage ( IBR=100uAdc )
Forward Voltage
( IF=1.0 mAdc )
( IF=10 mAdc )
( IF=50 mAdc )
( IF=150 mAdc )
V(BR)
70
-
-
715
VF
-
855
-
1000
-
1250
( VR=70 Vdc )
Reverse Voltage Leakage Current
( VR=25 Vdc, TJ=150^oC )
IR
( VR=70 Vdc, TJ=150^oC )
-
2.5
-
30
-
50
Diode Capacitance ( VR=0, f=1.0MHZ )
CJ
-
1.5
Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC)=1.0mA, RL=50 )
trr
-
6.0
Forward Recovery Voltage ( IF=10 mAdc, tr=20nS )
VFR
-
1.75
Unit
Vdc
mVdc
uAdc
pF
nS
Vdc
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
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