BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

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Monolithic Dual Switching Diode
Common Cathode
3
BAV70
1
2
SOT-23
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM( surge )
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
CATHODE
3
Value
70
200
500
Max.
225
1.8
556
300
2.4
417
-55 to +150
DEVICE MARKING
BAV70=A4
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( IBR=100uAdc )
V(BR)
70
Forward Voltage
( IF=1.0 mAdc )
( IF=10 mAdc )
( IF=50 mAdc )
( IF=150 mAdc )
-
VF
-
-
-
( VR=70 Vdc )
-
Reverse Voltage Leakage Current
( VR=25 Vdc, TJ=150^oC )
IR
-
( VR=70 Vdc, TJ=150^oC )
-
Diode Capacitance
( VR=0, f=1.0MHZ )
CJ
-
ANODE
1
2
ANODE
Unit
Vdc
mAdc
mAdc
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
Max.
-
715
855
1000
1250
2.5
60
100
1.5
Unit
Vdc
mVdc
uAdc
pF
Reverse Recovery Time
( IF=IR=10 mAdc, VR=5.0 Vdc, IR(REC)=1.0mAdc, RL=100 )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
REV. : 0
trr
-
6.0
nS
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