1N4148G Datasheet, PDF (1/2 Pages) Zowie Technology Corporation – SMALL-SIGNAL DIODE

1N4148G
SMALL-SIGNAL DIODE
Reverse Voltage 100 Volts
Peak Forward Current - 150mA
DO-35
1.02 (26.0)
MIN.
.022 (0.56)
.018 (0.46)
.165 (4.2)
MAX.
1.02 (26.0)
MIN.
.079 (2.0)
DIA.
MAX.
FEATURES
* Silicon Epitaxial Planar Diode
* Fast switching diode.
* Lead free product
MECHANICAL DATA
Case : DO-35 Glass Case
Weight : approx. 0.13 gram
*Dimensions in inches and (millimeters)
MAXIMUM RATINGS THERMAL CHARACTERISTICS ( TA=25^oC unless otherwise noted )
Continuous Reverse Voltage
PARAMETER
SYMBOLS
VR
VALUE
75
Peak Reverse Voltage
VRM
100
Average Rectified Current
Half Wave Rectification with Resistive Load at Tamb = 25^oC
IF( _{AV )}
150
Surge Forward Current at t < 1s and Tj = 25^oC
IFSM
500
Power Dissipation at Tamb = 25^oC⁽¹⁾
Ptot
500
Thermal Resistance Junction to Ambient Air⁽¹⁾
R JA
350
Junction Temperature
TJ
175
Storage Temperature
TSTG
-65 to +175
o
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
PARAMETER
Reverse Voltage Leakage Current
Reverse Breakdown Voltage
TEST CONDITION
( VR=20Vdc )
( VR=75Vdc )
( VR=20Vdc, TJ=150^oC )
( IR=100uAdc )
SYMBOL
IR
V( BR )
MIN.
-
-
-
100
TYP.
-
-
-
-
MAX.
25
5
50
-
Forward Voltage
( IF=10mAdc )
VF
-
-
1.0
Junction Capacitance
Voltage Rise when Switching ON
( tested with 50 mA Pulses )
( VR=0, f=1.0MHz )
( tp=0.1us, Rise time < 30ns
fp=5 to 100 kHZ
CJ
-
-
4
VFR
-
-
2.5
Reverse Recovery Time
( IF=10mA, IR=1mA, VR=6V, RL=100 )
trr
1. Vaild provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
-
-
4
UNITS
Vdc
Vdc
mAdc
mAdc
mW
K/W
o_C
o_C
UNITS
nAdc
uAdc
uAdc
Vdc
Vdc
pF
V
nS
REV. : 0
Zowie Technology Corporation