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PRF949 Datasheet, PDF (2/4 Pages) NXP Semiconductors – UHF wideband transistor
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SMD Type
Electrical Characteristics
Parameter
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 , VBE = 0 V
Collector -base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 5 mA, VCE = 6 V
Transistor
Symbol
Values
Unit
min. typ. max.
V(BR)CEO 10
-
-V
ICES
-
-
100 µA
ICBO
-
-
100 nA
IEBO
-
-
0.1 µA
hFE
100 140 200 -
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