LSP01 Datasheet, PDF (2/2 Pages) Zhaoxingwei Electronics ., Ltd – P-Channel 2.5-V (G-S) MOSFET

SMD Type
LSP01
Transistors
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance *
Forward Transconductance *
Diode Forward Voltage *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
* Pulse test: PW 300 ìs duty cycle 2%.
Symbol
Testconditons
V(BR)DSS VGS = 0 V, ID = -250 ìA
VGS(th) VDS = VGS, ID = -250 ìA
IGSS VDS = 0 V, VGS = 8 V
VDS = -20 V, VGS = 0 V
IDSS
VDS = -20 V, VGS = 0 V, TJ = 55
VDS
ID(on)
-5 V, VGS = -4.5 V
VDS -5 V, VGS = -2.5 V
VGS = -4.5 V, ID = -2.8 A
rDS(on)
VGS = -2.5 V, ID = -2.0 A
gfs VDS = -5 V, ID = -2.8 A
VSD IS = -0.75 A, VGS = 0 V
Qg
Qgs VDS = -6V ,VGS = -4.5 V , ID= -2.8 A
Qgd
Ciss
Coss VDS = -6V ,VGS = 0 , f = 1 MHz
Crss
td(on)
tr
td(off)
VDD = -6V , RL = 6Ù ,
ID = -1A , VGEN =- 4.5V , RG = 6Ù
tf
Min Typ Max Unit
-20
-0.45
V
-0.95
100 nA
-1
A
-10
-6
A
-3
0.08 0.1
0.11 0.15
6.5
S
-0.8 -1.2 V
4.5 10
0.7
nC
1.1
375
95
pF
65
20 30
40 60
ns
30 45
20 30
2