XV26D0UDJ Datasheet, PDF (1/4 Pages) Zhaoxingwei Electronics ., Ltd – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

SMD Type
Mosfets
DMN26D0UDJ
Product Summary
V_(BR)DSS
20V
R_DS(on)
3.0Ω @ V_GS= 4.5V
6.0Ω @ V_GS= 1.8V
I_D
T_A = +25°C
240mA
180mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
 Dual N-Channel MOSFET
 Low On-Resistance:
 3.0Ω@ 4.5V
 4.0Ω@ 2.5V
 6.0Ω@1.8V
 10Ω@1.5V
 Very Low Gate Threshold Voltage, 1.05V max
 Low Input Capacitance
 Fast Switching Speed
 Ultra-Small Surface Mount Package
 ESD Protected Gate (HBM 300V)
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
Applications
 DC-DC Converters
 Power management functions
Mechanical Data
 Case: SOT963
 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
 Weight: 0.0027 grams (approximate)
SOT963
D₁
G₂
S₂
ESD PROTECTED
Top View
S₁
G₁
D₂
Top View
Schematic and Transistor Diagram