NTA4151P Datasheet, PDF (1/6 Pages) ON Semiconductor – Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89

SMD Type
Transistors
NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
• Low R_DS(on) for Higher Efficiency and Longer Battery Life
• Small Outline Package (1.6 x 1.6 mm)
• SC−75 Standard Gullwing Package
• ESD Protected Gate
• Pb−Free Packages are Available
Applications
• High Side Load Switch
• DC−DC Conversion
• Small Drive Circuits
• Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
V_(BR)DSS
−20 V
R_DS(on) TYP
0.26 W @ −4.5 V
0.35 W @ −2.5 V
0.49 W @ −1.8 V
I_D MAX
−760 mA
P−Channel MOSFET
D
G
S
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
(Note 1)
Steady State
V_DSS
V_GS
I_D
−20
V
±6.0
V
−760 mA
Power Dissipation (Note 1)
P_D
SC−75 Steady State
SC−89
mW
301
313
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
I_DM
T_J,
T_STG
I_S
T_L
±1000 mA
−55 to _°C
150
−250 mA
260
°C
Gate−to−Source ESD Rating −
ESD
1800
V
(Human Body Model, Method 3015)
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
R_qJA
°C/W
415
400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).