HVD359 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCXO

SMD Type
Variable Capacitance Diode for VCXO
HVD359
Diodes
Features
High capacitance ratio and good C-V linearity.
To be usable at low voltage.
Super small Flat Lead Package (SFP) is suitable for surface mount design.
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1^+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute M axim um R atings T a = 25
Param eter
Reverse Voltage
Junction tem perature
Storage tem perature
Sym bol
VR
Tj
T stg
V a lu e
15
125
-55 to +125
U n it
V
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Max
Unit
IR1
Reverse current
IR2
VR = 10 V
VR = 10 V,Ta = 60
10
nA
100
C1
Capacitance
C4
Capacitance ratio
n
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
C1 / C4
24.8
29.8
pF
6
8.3
3
Series resistance
ESD-Capability *¹
rs
VR = 4 V, f = 100 MHz
1.5
C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
80
V
Note:
1. Failure criterion ; IR 20 nA at VR =10 V
Marking
Marking
G