CSD25310Q2 Datasheet, PDF (1/5 Pages) Texas Instruments – CSD25310Q2, 20 V P-Channel NexFET Power MOSFETs

SMD Type
CSD25310Q2
MosFET
Power Management Switch Applications
• Low ON-resistance: R_DS(ON) = 43.0 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 26.5 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 19.0 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 15.3 mΩ (max) (@V_GS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Symbol
V_DSS
V_GSS
Rating
Unit
−20
V
±8
V
Drain current
Pulse
I_DP (Note 1)
−30
A
Power dissipation
Channel temperature
Storage temperature
P_D(Note 2)
1
W
t≦10s
2
T_ch
150
°C
T_stg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Unit: mm
SON 2 x 2 mm
Plastic Package
1,2,5,6: Drain
3: Gate
4: Source
Weight: 8.5 mg (typ.)
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Equivalent Circuit(Top View)
6
5
4
Pin Condition(Top View)
65 4
1
2
3
Drain
Source
1 23
Polarity marking (on the top)
*Electrodes : on the bottom