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CJMPD8 Datasheet, PDF (1/5 Pages) Zhaoxingwei Electronics ., Ltd – DUAL P-CHANNEL ENHANCEMENT MODE MOSFET | |||
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SMD Type
MOSFET
Features
CJMPD08
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
ï· Low On-Resistance
ï· 70m⦠@VGS = -4.5V
ï· 85m⦠@VGS = -2.5V
ï· 86m⦠(typ) @VGS = -1.8V
ï· Low Gate Threshold Voltage, -0.9V Max
ï· Fast Switching Speed
ï· Low Input/Output Leakage
ï· Low Profile, 0.5mm Max Height
ï· Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
ï· Halogen and Antimony Free. âGreenâ Device (Note 3)
ï· Qualified to AEC-Q101 Standards for High Reliability
ï· Case: U-DFN2020-6 Type B
ï· Case Material: Molded Plastic, âGreenâ Molding Compound;
UL Flammability Classification Rating 94V-0
ï· Moisture Sensitivity: Level 1 per J-STD-020
ï· Terminal Connections: See Diagram
ï· Terminals: Finish â NiPdAu Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4
ï· Weight: 0.0065 grams (Approximate)
U-DFN2020-6
Type B
D2
D2
G1
S1
Pin1
S2
G2
D1
D1
Bottom View
G1
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
D1
S1
Symbol
VDSS
VGSS
ID
IDM
D2
G2
S2
Equivalent Circuit
Value
-20
±12
-3.8
-13
Units
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
Rï±JA
TJ, TSTG
Value
1.4
89
-55 to +150
Unit
W
°C/W
°C
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