1SV277 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (VCO FOR UH BAND RADIO)

SMD Type
Silicon Epitaxial Planar Diode
1SV277
Diodes
Features
High Capacitance Ratio:C1V/C4V = 2.30Typ.)
Low Series Resistance:rs = 0.42 (Typ.)
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
10
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Sym bol
VR
IR
C1V
C4V
C1V/C4V
rs
Conditions
IR = 1 A
VR = 10 V
f = 1 MHz;VR = 1 V
f = 1 MHz;VR = 4 V
VR = 1V, f = 470 MHz
M in
10
4
1.85
2
Typ
4.5
2
2.3
0.42
Max
3
4.9
2.35
0.55
Unit
V
nA
pF
Marking
Marking
TO